具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT

n-AlGaAs/InGaAs/n-GaAs Double Modulation Doped Pseudomorphic HEMT with MIS Structure

本文设计和研制了具有MIS结构的n-AlGaAs/InGaAs/n-GaAs 双调制掺杂赝HEMT.它结合了MISFET和双调制掺杂赝HEMT的特点.1μm栅长器件的最大漏电流密度达400mA/mm,栅反向击穿电压高达15V.器件还显示了良好的微波射频特性.

The n-AlGaAs/InGaAs/n-GaAs Double Modulation Doped Pseudomorphic HEMTs withMIS structure combining the advantages of MISFET and double modulation doped pseudomor-phic HEMT have been designed and fabricated.For the lμm gate device, the maximum draincurrent reaches 400 mA/mm,and the gate reverse breakdown voltage is as high as 15V. Thedevices also show the good microwave characteristics.