类硅离子精细结构能级和辐射寿命

Fine-structure energy levels and radiative lifetime in Si-like ions

用全相对论多组态自洽场方法,计算了类硅离子的1s、2s、2p-、2p、3s、3p-、3p、3d-、3d、4s、4p-、4p、4d-、4d、4f-、4f、5s、5p-、5p、5d-、5d、5f-、5f、5g-、5g、6s、6p-、6p轨道的912个精细结构能级和辐射寿命以及各种跃迁参数。能级的计算值和实验值符合得很好。从计算结果中发现了一些亚稳态能级。

In this paper, energy levels, radiative lifetime and various transition parameters for allowed transitions among the 912 fine-structure levels belong to the(1s^22s^22p^6) 3s^23p^2,3s^23p3d,3s^23p4l,3s^23p5l and (1s^22s^22p^6) 3s3p^3,3p^4 et al.configurations of the Si-like ions ⅤⅩ and Mo ⅩⅥ have been calculated using the expanded fully relativistic GRASP code. The results are in good agreement with recent experimental data. We have found some long-lived levels.