浸涂法制备掺锑SnO_2透明导电膜

Preparation of Sb-Doped SnO_2. Transparent Conductive Film by Dip-Coating Method

以三氯叔丁醇锡和三氯化锑为主的有机-无机溶液,采用垂直浸涂法,在普通Na-Ca-Si系玻璃基片上制备了透明的掺锑SnO_2导电膜。薄膜的主透过波长在480nm附近,膜厚达1.26μm时其透光率约为80％,薄层电阻R_s可低达35Ω。研究表明,预涂SiO_2致密膜对于消除由于界面上Na^+的扩散而造成的电性能下降是有效的。锑的掺杂浓度在Sb/Sn=6％(mol)时膜有最低的R_s值,可见光-远红外透射率随Sb的增加而下降。随膜厚的增加,R_s按指数规律下降,但光吸收增加。膜厚在1.2μm时其光电特性优化因子φ_(T(?))最大。适当提高热处理温度和延长热处理时间,膜中SnO_2主晶相的晶化程度提高,膜的光、电性能可以同时得到改善。

Using tin trichloridc monoalkoxide SnCl_3 (OBu^t) and trichloride antimony as main starting materials, Sb-doped SnO_2 transparent conductive films on thc sodc-lime-silica glass substratcs were prepared by dip-coating method. The main transmissive wavelength of the films is near 480nm. When the film thickness reaches 1.26μm, the transmittance is about 80％ and the sheet resistance R_s can be as low as 35Ω. The type and the mechanism of conductivity for SnO_2: Sb film were discussed. Thc results show that the decreasing of conductivity due to Na^+ diffusing into SnO_2: Sb films can be prevented by precoating dense SiO_2 films on the substrates. The value of R_s decreases to minimum when Sb-doped concentration is about 6％(mol). The optical transmission decreases with increasing the antimony content. The figure of merit φ_(TC) of the film achieves a maximum value when the thickness is 1.2μm. The heat treatment conditions which affecting the properties of the films were also studied.