摘要
本文报导了LEC法半绝缘砷化镓单晶中含碳量对SI-GaAs热稳定性的影响。在800℃以上退火,发现当晶体中C含量大于1.5×10^(16)cm^(-3)时,SI-GaAs的热稳定性变差;而C含量小于5×10^(15)cm^(-3)时,通常表现出良好的热稳定性。
In this paper we investigated the influence of the carbon concentration on the thermal stability in a semi-insulating GaAs. The crystals with different carbon concentration are annealed at 800℃ , 830℃ and 850℃ from 20mins to 10h with a SiO2 cap or capless in a flowing gas. It was found that carbon concentration strongly effects thermal stability. The crystals of larger than 1. 5×1016 cm-3 carbon concentration showed a greater tendency to convert during annealing and the crystals with less than 5×1015cm-3 carbon concentration showed great stability during annealing.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第1期34-37,共4页
Research & Progress of SSE
关键词
热转换
热处理
砷化镓
碳含量
Thermal Stability, Thermal Annealed, SI-GaAs
