摘要
本文从温控晶闸管结构模型出发,建立一组相应的方程,获得了温控晶闸管导通温度与离子注入剂量的关系。通过精确控制离子注入剂量,器件可以获得预期的导通温度。
In the paper, a set of equations based on a thermothyristor model was given to obtain the relationship between the turn-on temperature and the dose of ion implantation. The devices with the expected turn-on temperature have been fabricated by controlling the dose precisely.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第1期77-81,共5页
Research & Progress of SSE
关键词
传感器
温敏器件
晶闸管
开关温度
Sensor, Thermosensor, Thermothy ristor, Thy ristor, Switch Temperature