摘要
叙述了一种采用MOS结构研究半导体深能级陷阱的深能级瞬态谱(DLTS)测试与分析方法。该方法简便易行,适用范围广。通过对n-Al_(0.2)Ga_(0.8)As中深能级的研究表明,MOS结构和p^+-n结构的DLTS结果相同。
A new method of DLTS measurement and analysis of MOS struc-ture is presented in this paper. This method can be widely used in deep level researches and is very easy to operate. As an example, a deep level in n-Al0.2 Ga0.8As has been detected from two structures of MOS and p+-n to show the same DLTS for them.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第2期152-156,共5页
Research & Progress of SSE
基金
国家自然科学基金资助项目
关键词
深能级
MOS结构
肖特基势垒
瞬态谱
Deep Levels,MOS Structure, Schottky Barrier, Deep Level Transient Spectroscopy(DLTS)
