薄片样品霍尔迁移率的无接触测试和计算

Measurmg and Calculating the Hall Mobility of Semiconductor Wafer by Contactless Method

设计了一种微波介质波导探头用于无接触测量半导体薄片样品的霍尔迁移率。它具有体积小、被测薄片样品大小不受限制等优点。在直流磁场变化时,无接触测试了一组n型硅薄片样品的横向磁阻,讨论了磁阻的计算方法及考虑样品的晶向后,由磁阻计算霍尔迁移率的方法,实验测试及计算结果是较为满意的。

We designed a new dieleetric waveguide probe to measure the Hall mobility of semiconductor wafer contactlessly. It is small and suitable for any shape of the wafer. Using this probe, we have measured the magnetic resistance of some n type silicon wafers corresponding to tbr veruitinn of the magnetic field intensity. In this paper, we have also presented the calculating method of the magnetic resistivity and the Hall mobility at cotisidering the lat-tic direction of the wafers. The results of these experiments and calculation are well satisfied.