摘要
对微波晶体管振荡器的相位噪声进行了分析。为达到压控振荡器的低相位噪声要求,采用了低电平振荡经放大后输出的设计方案。实现的微带压控振荡器工作于L波段. 相对电调带宽大于10%,不加介质谐振器其SSB相位噪声约达到一90dBC/Hz/10kHz;经加放大输出功率达到10mW以上,功率平坦度≤±0.7dB. 在-20~+60℃范围内正常工作,频率温度稳定性为6×10^(-5);本压控振荡器已应用于频率合成器中。
The phase-noise of microwave bipolar transistor VCOs is discussed. To obtain low phase-noise VCOs.a new kind of amplified oscillation with low power lever is used. The VCOs oscillate a' L-band with typical SSB phase-noise of -90 dBC/Hz/10 kHz from-20 to +60. A tuning band width large than 10% and a tuning power variation less than 0.7 dB have been obtained. The frequency - temperature stability of the VCOs is 6 10-5. The VCOs have been used in microwave synthesizer.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第2期121-125,共5页
Research & Progress of SSE