摘要
提出并研制成一种新型硅三端负阻器件。该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有“双负阻”特性和正阻区阻值易于控制等特点。由理论计算出的器件I_c—V_(CB)特性和负阻参数与实验结果符合良好。
In this paper, a new silicon three terminals device with negative resistance has been proposed and fabricated. This device consists of a n-channel depletion mode MOS transistor,a lateral pnp bipolar transistor and a resistor and has the behavior of 'dual negative resistance' characteristics and easily controlled resistance in positive resistance region. The theoretical calculating Ic-VCE characteristic and negative resistance parameters are in good agreement with the experimental results.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第3期204-210,共7页
Research & Progress of SSE
基金
国家自然科学基金项目
关键词
三端
负阻器件
复合或
集成器件
Three Terminals Negative Resistance Devices, Integrated Devices
