Si衬底上MBE GaAs MESFET与IC制备

Fabrication of MBE-Grown GaAs MESFET and IC on Si Substrate

叙述在MBE(分子束外延)GaAs/Si材料上制作GaAs MESFET与Ic的研究。考虑到GaAsIC与Si IC单片集成的需要,采用了Ti/TiW/Au肖特基金属化和Ni/AuGe/Ni/Au欧姆接触金属化,层间介质采用等离子增强淀积氮化硅和聚酰亚胺复合材料。在该工艺基础上,制备了性能良好的GaAs/Si MESFET与IC。

In this paper, the research on fabricating GaAs MESFET and IC MBE-grown on' silicon substrate is reported. For the purpose of on chip integrating GaAs IC and Si IC,Ni/ AuGe/Ni/Au is used for ohmic metallization, Ti/TiW/Au for Schottky and interconnect metallization and SiN/polymide doublelayer dielectric for interlayer fabrication, Based on this process,well performed GaAs/Si MESFET and IC have been fabricated.