GaAs MESFET直流解析模型

A Model of GaAs MESFET's Direct Current Characteristics

根据FET沟道区电场分布的特点,用电子速场特性的分段近似提出了一种新的GaAs MESFET直流解析模型。本文提出的模型可用以计算高夹断电压和低夹断电压GaAs MESFET的直流特性,比完全速度饱和模型及平方律模型更为精确。

A new analytical model of a short channel GaAs MESFET is proposed by dividing the MESFET into two sections that may be replaced with the constant mobility region and the velocity saturation region. The present model can describe GaAs MESFET behaviour for both high-pinch off and low-pinch off voltages. The results obtained by this model are compared with the experiments. It is shown that the results of this model agree better with the experiments than those of the complete velocity saturation model and the square-law model.