Si-SiGe-Si异质结双极晶体管的数字模拟

Numerical Simulation of Si-SiGe-Si Heterojunction Bipolar Transistor

报道了Si-SiGe-Si异质结双极晶体管的数字模拟结果。采用有限差分法解半导体器件的载流子输运方程,求出各点上的载流子浓度及其电位,由此可确定器件的直流特性。器件的发射区掺杂浓度为1.4×10^(17)cm^(-3),基区掺杂浓度为7×10^(18)cm^(-3),SiGe基区中Ge摩尔含量为0.31,模拟得到的最高电流增益为390。数字模拟得到的晶体管特性曲线与实验结果符合良好。

In this paper we report the results obtained from numerical simulation of Si-SiGe-Si heterojunction bipolar transistor. The carrier density and potential at each point can be obtained from numerical solution of the carrier transport equations with the finite-differ-ence method, and then DC characteristics of the device can be obtained. The doping density is 1. 4×1017 cm-3 in emitter area and 7 × 1018 cm-3 in base area. Ge Mole fraction in SiGe base is 0. 31. From simulation, the highest current gain is 390 and the characteristics curve agrees very well with published experimental results.