摘要
本文第一部分用较简单而不同于文献[1]的方法推导出双基区晶体管(DUBAT)有关的负阻参数,与实验结果符合良好;第二部分对功率型DUBAT进行了设计并初步制成这种器件。
This paper contains two parts. In the first part,the negative resistance parameters of DUBAT have been derived by a new simple method which is different from reference [1]. The theoretical results are in good agreement with experimental results. In the second part,a power DUBAT has been designed and fabricated.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第4期306-313,共8页
Research & Progress of SSE
基金
国家自然科学基金资助项目
关键词
三端负阻器件
负阻器件
单结晶体管
Three Terminal Negative Resistance Device, Negative Resistance Integrated Device
