散射对量子阱隧穿电流的影响

Effect of Scattering on Electron Tunneling in Quantum Well

本文从单带双谷模型出发研究了电子在量子阱内遭到散射时电子状态及隧穿几率的变化。弹性散射使用δ散射势来计算,非弹性散射则用虚散射势来描述。前者使隧穿电流峰向高电压端移动,后者减弱了电流峰的谐振强度。分别讨论了位于势阱和势垒层中的散射中心的不同散射作用。隧穿电流的变化趋势同中子辐照实验数据相吻合。

The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory. A delta scattering potential is used to calculate the elastic scattering behav-ior, whereas the nonelastic scattering is described by an imaginary scattering potential. The former makes the tunneling current to shift to higher voltage and the tunneling current peak is weakened by the latter. The difference between barrier scattering and well scattering is dis-cussed. The calculated tunneling current agrees with the f ast neutron irradiation experiment.