无接触法测量多晶硅材料的少子扩散长度

Measuring Diffusion Length of Minority Carrier in Polysilicon by Using Contactless Method

用微波光电导谱仪无接触、非破坏性地测量了多晶硅的微波光电导谱,推导了由光电导谱计算多晶硅样品的少子扩散长度和表面复合速度的计算方法,并由此算得了样品的少子扩散长度和表面复合速度。测试区域是一个直径为3mm的圆斑。这是一种简便而又准确的测试方法。这样的方法还适用于GaAs薄片材料少子扩散长度的测量和计算。

The microwave photoconductivity spectrum (MPCS) of polysilicon has been measured contactlessly and non-destructively. The calculating method of minority carrier diffusion length and surface recombination velocity from MPCS of polysilicon has also been derived. The calculating results of some samples are presented. The test area is a circular spot about 3 mm in diameter. This is a simple and precise method. It can also be used to measure and calculate the minority carrier diffusion length of Ga As wafer.