摘要
介绍肖特基势垒IRCCD的结构和工作原理,制作工艺,目前国内外发展的状况和提高器件性能的各种措施.
This paper introduces the structure、operational principle and fabricated technique of the schottky-barrier infrared charge-coupled devices. The state-of-art of the native and foreign SBIRCCD and various methods of improving performance are also presented.
出处
《光电子技术》
CAS
1992年第1期52-58,共7页
Optoelectronic Technology
关键词
肖特基势垒
红外技术
焦平面阵列
optical cavity structure SBD, internal photoemission