GaAs/(Pd,Ti,Pd,Au)多层膜的退火扩散机制

The Anneal Diffusion Mechanism of GaAs/(Pd,Ti,Pd,Au) Multi-layer Films

采用扫描俄歇电子能谱法 ,对GaAs/Pd( 50 )Ti( 4 0 0 )Pd( 4 0 0 )Au( 2 0 0 0 )在不同退火条件下多层膜间的扩散机制进行了研究 结果表明 ,薄膜与衬底结合较好 ,各层薄膜之间的扩散随退火温度的升高而更加充分 ,在 4 50℃以上退火后 ,各层薄膜之间发生了充分的扩散 。

The diffusion mechanism of GaAs/Pd(50 ?)Ti(400 ?)Pd(400 ?) Au(2 000 ?) in different annealing condition was studied by scanning Auger electron spectroscopy method.The following conclusions indicate that the thin films combine well with the base each other.The diffusion among multi-layer films is much more full as the annealing temperature rises. After annealing at over 450 ℃,the multi-layer films diffuse fully,and the thin films combine better with the base each other than that of not annealing.