双栅MOS场效应晶体管的短沟道效应

The Short Channel Effect of Dual-Gate MOS Field-Effect Transistor

一引言早在1965年就由Ditrick,Mitchell和Dawson等人研制出世界上第一批具有实际应用价值的双栅MOS四极管,也称双栅MOS场效应晶体管,它具有频率高、噪声低、增益可控和工作稳定等特点。关于DG—MOSFET′S在我国正处于开发和研制阶段,笔者虽早已做出管芯并已发了有关文章。但对它的特性和应用还有待进一步深入研究,特别是对它的阈电压和击穿电压等随沟道长度的缩短而降低。这种现象和本质,即所谓短沟道效应,要进行深入研讨,以进一步扩大其应用领域。二短沟道效应 DG—MOSFET′S同SG-MOSFET′S一样,为了提高频率和开关特性,除增大g_(ms)/c_(gs)的比值、减小寄生电容c_(ps)等外,最有效的办法就是减小沟道长度L_1和L_2.当L_1和L_2减小到可以同它的源漏耗尽层厚度相比拟时,也会出现所谓短沟道效应(SCE),即阈电压V_(th)

The threshold voltage and breakdown voltage of dual-gate MOS field-effect transistor (DG-MOSFET'S) will be scaled down with the decrease in channel length that is so called short-channel effect. In this paper we have analysed and derived the characteristics of DG—MOSFET'S, so the application of it will be probably extended.