摘要
真空区熔特高阻硅单晶是一种纯度很高的硅材料,它是制造配置于测量仪器中的各种高阻硅探测器的基础材料。本文对硅单品导电型号、电阻率及其不均匀性、少子寿命、晶体直径等方面进行了研究,取得很好的实验结果,其中P型硅单晶电阻率达(3-10)×10~4Ω·cm。
High purity silicon crystals with ultra high resistivity have been grown by vacuum floating zone melting for fabrication of different types of high resistivity silicon nuclear radiation detectors. The conductivity type, resistivity and inhomogeneity, lifetime of minority carriers, crystal diameter etc were studied. The resistivity of P-type silicon single crystals reached(3-10)×104Ω·cm.
关键词
高阻探测器
电阻率
硅
单晶
high resistivity silicon detectors, resistivity
