铱的纳米氧化物作为神经电极(英文)

Iridium nano-oxide as a neural electrode

厚度为30nm和60nm的铱薄膜应用电子束蒸发硅(Si)和商用纯钛(CP)Ti的薄片而制成 铱薄膜的性能表明它与大片的由Ir和Ir氧化物培育的成纤维细胞Ir.Swiss3T3具有相同的电荷注射性能,并且没有细胞毒性 也表明。

Iridium film with the thickness of 30 nm and 60 nm were formed on both Si wafer and commercially pure (CP) Ti by electron beam evaporation. The thin iridium film showed the identical charge injection capability with the bulk Ir. Swiss 3T3 fibroblasts culture on Ir and Ir oxide showed no cytotoxicity. Also, embryonic cortical neural cell culture on electrode indicated neurons adhered and survived by the formation of neurofilament.