InSb中离子注入二次缺陷研究

A STUDY OF SECONDARY DEFECTS IN ION- IMPLANTED InSb

本文用平面的透射电子显微术(TEM)、剖面的透射电子显微术(XTEM)以及卢瑟福背散射和沟道谱(RBS),研究InSb中离于注入Zn^+,Mg^+,Be^+产生的二次缺陷。以及它们的退火特性。结果表明,轻离子Be^+注入产生的二次缺陷比重离子Zn^+注入产生的要少得多,而Mg^+离子介于Be^+离子和Zn^+离子之间,在中等剂量下(1×10^(13)cm^(-2)附近),注入损伤并不严重,而且容易恢复。从360℃到440℃之间作了退火温度的研究。从研究结果发现,退火温度以360℃为佳。离子注入InSb中的二次缺陷的形貌与Si中的不同,InSb中的二次缺陷以位错网为主,位错环所占比例不大且尺寸较小,而沉淀物和层错四面体也出现在其中。

In this paper, the secondary defects and their annealing behaviours in Zn+, Mg+, Be+ ion-implanted InSb have been investigated by means of the plan-view transmission electron microscopy (TEM), cross-sectional TEM(XTEM) and Rutherford backscattering and channeling spectroscopy. The result shows that the secondary defects caused by the lighter Be+ ion implantation are much less than that caused by the heavier Zn+ ion implantation. And the ion Mg+, in the region of medium dose (about 1×1031/cm2), causes the damage easy to restore. The effect of annealing temperature is investigated from 360℃ to 440℃, and the result indicates that the 360℃ is a better annealing temperature. The figuration of secondary defects in ion-implanted InSb is differant from that in ion-implanted Si: the secondary defects in ion-implanted InSb consist of dislocations and dislocation networks mainly, and the dislocation loop is not dominant, however, precipitates and fault tetrahedras also exist in it.