组合离子注入的杂质浓度分布与损伤分布比较

The Distribution of Impurity and the Lattice Strain in Compound Ion-implantation

用LSS理论,计算了注入能量为180keV,注入剂量为1×10^(13)～5×10^(15)ion/cm^2的N_2^+/As^+组合离子注人Si的杂质浓度分布,由X射线衍射的运动学理论,利用多层模型和试探应变函数拟合X射线衍射曲线,得到了晶格应变随注入深度的分布,并将二者进行了比较.结果表明N_2^+/As^+组合离子注入单晶Si的应变分布曲线为单峰,位于杂质浓度分布曲线的双峰之间,靠近重离子峰.

In this paper, the impurity density distribution of N2+ /As+ compound ion implanted Si with implanted energy at 180keV, implanted dose at 1 × 1013 - 5 × 1015 ion/cm2 was calculated by LSS theory. On basis of a kinematical theory, the lattice strain distribution as a function of depth were obtained by mul-tiplayer model and trial and error strain function to simulate the rocking curves of X - ray diffraction. And the lattice strain distribution were compared with the impurity density distribution, the result indicates that the lattice strain distribution curve of N2+ /As+ compound ion implanted Si has a peak between two peaks of the impurity density distribution curve near the left peak.