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Si基光电子学的研究与展望 被引量:10

Study and prospect of Si-based optoelectronics
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摘要 Si基光电子学是为顺应二十一世纪以现代光通信和光电子计算机为主的信息科学技术发展需要,在全世界范围内迅速兴起的一个极为活跃的研究前沿。其最终目标之一是为了实现人们所期盼的全Si光电子集成电路。本文尝试性地评论了这一集Si材料技术、纳米技术、微电子技术以及光电子技术为一体的新型交叉学科,近年来在直接带隙Si基低维材料的设计、晶粒有序Si基纳米材料的制备与稳定高效Si基发光器件的探索等方面所取得的若干重要研究进展,并预测了全Si光电子集成技术的未来发展趋势。 Si-based optoelectronics is becoming a very active research area due to its potential applications for optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. We mainly reviewed the current developments of this exciting field in the recent years. The involved contents indude the design of direct bandgap Si-based low dimensional materials, fabrication of ordered Si-based nanocrystalline films and approach of stable and high-efficient Si-based light-emitting devices. Finally, we predicate the developed tendency of all-Si optoelectronic integrated technology in the near future.
出处 《量子电子学报》 CAS CSCD 北大核心 2004年第3期273-285,共13页 Chinese Journal of Quantum Electronics
基金 河北省自然科学基金(503125和500084) 中国科学院半导体研究所半导体材料科学重点实验室和中国科学院微电子研究所资助项目
关键词 光电子学 直接带隙Si基低维材料 晶粒有序Si基纳米材料 稳定高效Si基发光器件 全Si 光电子集成 optoelectronics direct bandgap Si-based low dimensional materials ordered Si-based nanocrystalline films stable and high-efficient Si-based luminescent devices all-Si optoelectronic integrated technology
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  • 1荻野俊郎 本间芳和.半导体表面的原子结构设计〔日文〕[J].日本物理学会志,2001,56:83-90.
  • 2村田好正 等编.自组织化工艺技术〔日文〕[M].东京:培风馆,2001.255-260.
  • 3小口信行.利用液滴外延法的GaAs量子点的制备〔日文〕[J].应用物理,1996,65:392-396.
  • 4Blaaderen A V 1998 MRS Bulletin Oct. 39.
  • 5He Y J, Shu H M, Tang F J, Dong P and Wang H Z 2001 Acta Phys. Sin. 50 892(in Chinese).
  • 6Cheng B Y, Ni PG, Jin C G, Li Z L, Zhang D Z, Dong P and Guo X C 1999 Optics Commun. 170 41.
  • 7Stober W and Fink A J 1968 Colloid. Interf. Sci. 26 62.
  • 8Daragh P J, Gaskin A J and Scander J V 1976 Sci.Am.234 84.
  • 9Woodcock L V 1997 Nature 385 141.
  • 10Alder B J and Wainwright T E 1957 J. Chem. Phys .27 1208.

共引文献33

同被引文献77

  • 1PENG Yingcai,ZHAO Xinwei,FU Guangsheng.Progress of Si-based nanocrystalline luminescent materials[J].Chinese Science Bulletin,2002,47(15):1233-1242. 被引量:5
  • 2彭英才,X.W.Zhao,傅广生.晶粒有序Si基纳米发光材料的自组织化生长[J].材料研究学报,2004,18(5):449-460. 被引量:15
  • 3刘铁根,张凡,孟卓.纳米粒子大小及其分布检测方法的研究现状与发展[J].光学技术,2005,31(1):96-100. 被引量:14
  • 4彭英才,傅广生,王英龙,尚勇.提高掺铒硅基纳米材料发光效率的探索[J].人工晶体学报,2005,34(1):183-189. 被引量:4
  • 5Chen M J, Yen J L, Li J Y, et al. Stimulated Emission in a Nanostructured Silicon pn Junction Diode Using Current Injection [ J ]. Appl. Phys.Lett. ,2004,84(12) :2163.
  • 6Pavesi L, Negro L D, Mzzoleni C, et al. Optical Gain in Silicon Nanocrystals [ J ]. Nature,2000,408:440.
  • 7Khriachtechev L, Novikov S, et al. Optical Gain in Si/SiO2 Lattice: Experimental Evidence with Nanosecond Pulses [ J ]. Appl. Phys. Lett. ,2001,79(9) :1249.
  • 8Negro L D, Cazzane Ili M, Daldosso N, et al. Stimulated Emission in Plasma-enhanced Chemical Vapor Deposited Silicon Nanocrystals [ J ].Physica ,2003, El6:297.
  • 9Luterova K, Dohnalova K, Svrcek V, et al. Optical Gain in Porous Silicon Grains Embedded in Sol-gel Derived SiO2 Matrix under Femtosecond Excitation [J].Appl. Phys. Lett. ,2004,84(17):3280.
  • 10Zhao X W, Komuro S, Isshiki H,et al. Fabrication and Stimulated Emission of Er-doped Nanocrystalline Si Waveguides Formed on Si Substrates by Laser Ablation [J].Appl. Phys. Lett. ,1999,74(1) :120.

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