正方体GaAs量子点电子特性的数值自洽求解

Self-consistent calculation of the electronic properties of the cube quantum dot

采用抛物势作为量子点对电子有效约束势,使用有限差分法对Schrodinger-Poisson方程进行离散化,根据自旋密度泛函,进行数值自洽求解,得到三维正方体GaAs量子点电子总基态能、电子密度等电子特性,并与相同条件(电子数、自旋、尺寸)的二维正方形GaAs量子点的电子密度进行了对比。

Using the parabolic potential as confinement potential in quantum dot and using a finite difference method to discrete the Schrodinger-Poisson equations, an numerical self-consistent solution of three-dimension cube GaAs quantum dot is carried out based on spin-density-functional theory (SDFT). The electronic properties such as total ground state electronic energy, electron density are obtained, and a comparison with the electron density of the two-dimension square GaAs QD with same condition (electron number, spin, length) is hold.