Si/Si键合结构的电学性质测量及模拟

Electrical measurement and simulation of Si/Si bonding structure

研究Si/Si键合的电学性质对于界面研究和微电子器件的制备有着重要意义。分析了亲水处理方法键合的不同Si/Si键合结构的I-V特性,然后用SOS模型对n-Si/n-Si的C-V特性做了计算机辅助模拟,并和实际C-V曲线比较得出了平带电压VFB和界面态密度Din,这些结果对于键合的界面性质的了解和研究都是有意义的。

Understanding of electrical performance for Si/Si bonding structure is of great importance for both study of interface and fabrication of micro-electronic elements. We firstly analyzed I-V performance for different Si/Si bonding structures, and then using SOS model made capacitance curve-fitting for n-Si/n-Si structure. Comparing theoretical curve with experimental data, we got shifting voltage VFB and interfacial states density Din. These results availed to study the interface of silicon bonding structure.