一种增强多孔硅光致发光稳定性的方法

Method for Stabilization of n-Type Porous Silicon via Photochemical Reaction

以n型单晶硅为基底材料,采用电化学阳极氧化工艺和光化学氧化后处理工艺制备氧化多孔硅,利用扫描电子显微镜、红外光谱仪、荧光光谱仪研究氧化多孔硅形成前后的表面形态、组成、光致发光、耐碱性的变化。结果表明:光化学氧化后处理使n型多孔硅表面岛状硅柱间沟槽变窄,结构中出现Si%DO键(波数1146cm-1和1140cm-1)、OSi%DH键(波数2254cm-1)振动峰,在碱性介质中具有一定的耐蚀性;空气中贮存50d,氧化多孔硅光致发光强度下降缓慢,发光峰位置无明显变化,具有良好的光致发光特性。

The oxidized porous silicon is prepared by anodizing n-type single crystal silicon and photochemical oxidizing porous silicon. By means of scanning electron microscopy, infrared spectroscopy and fluorescence spectroscopy etc., the properties of oxidized porous silicon such as structure, morphology, photoluminescence, anti-corrosion are analyzed. The result shows that surface of freshly porous silicon is covered by a lot of silicon columns, but its structure is unstable. Oxidized by photochemical method, these silicon columns become greater in size, and partial Si―H_x band in structure is substituted by Si―O band around 1 146 cm^(-1) and OSi―H band around 2 254 cm^(-1), and its anti-corrosion performance in alkaline medium is also improved. Compared with freshly anodized porous silicon, the photoluminescence of oxidized porous silicon is more stable. The result demonstrates the feasibility of the method based on photochemical reaction for stabilizing porous silicon.