摘要
通过在UTB结构中利用矩形势垒近似求解沟道的薛定谔方程 ,应用费米统计建立了UTBMOSFET阈值区载流子量子化的一个解析模型。并利用自恰求解薛定谔方程和泊松方程的结果对模型进行了验证 。
Based on the theory of rectangular potential barrier of UTB device's surface, by solving Schrdinger's equation approximatively and using fermi statistical method, build a quantum-mechanical analytical model of subthreshold area of UTB MOSFET. Proof veracity of the model with poisson equation and Schrdinger's equation solved self-consistently. Relationship between change of threshold voltage and thickness of silicon film in UTB structure is analysed.
出处
《北京大学学报（自然科学版）》
CAS
CSCD
北大核心
2004年第3期412-416,共5页
Acta Scientiarum Naturalium Universitatis Pekinensis
基金
国家自然科学基金 (90 2 0 70 0 4)
863计划 (2 0 0 2AA1Z1510 )资助项目
关键词
UTB结构
量子化效应
反型层电荷
UTB
quantum-mechanical effects
inversion layer charge
