期刊文献+

集成电路金属互连焦耳热效应的测试与修正 被引量:3

Test and Modification of Joule-heated Effect of Metal Interconnector in Integrated Circuit
下载PDF
导出
摘要 采用拟合的方法 ,并利用DESTIN测试系统 ,研究了集成电路金属布线电阻与温度的关系 ;探讨了不同材料、不同尺寸和不同结构金属布线的焦耳热效应 ;揭示了在加速试验 (一定的高电流、高温 )条件下金属化自升温较大 ,必须考虑焦耳热效应作用的原理 ;解决了已往用环境温度代替测试结构表面实际温度所带来的误差 。 By using the fitting method and the DESTIN testing system, the relationship between the temperature and the resistance of the metal interconnector in integrated circuit (IC) was studied, and the Joule-heated effect of the metal interconnectors with various materials, sizes and structures were then investigated. It is revealed that in the accelerating test conditions with high current density and high temperature, the Joule-heated effect must be taken into consideration, for the metal temperature auto-increases rather rapidly. By the proposed method, the error caused by the replacement of real temperature in specimen surface by the circumstance temperature can be settled, thus obtaining the reliability analysis result with more accuracy.
出处 《华南理工大学学报(自然科学版)》 EI CAS CSCD 北大核心 2004年第5期34-37,共4页 Journal of South China University of Technology(Natural Science Edition)
关键词 焦耳热效应 集成电路 金属互连 电迁移 Joule-heated effect integrated circuit metal interconnector electromigration
  • 相关文献

参考文献5

  • 1Anata Y.Temperature-controlled wafer-level Joule-heated constant current EM tests of W/A1-Cu-Si/W wires [J].IEEE ICMTS,1994,7(3):147.
  • 2Steenwyk S D,Kankowski E F.Electromigration in aluminum to tantalum silicide contacts [J].IEEE Electron Devices Society and IEEE Reliability Society,1986,30:17-30.
  • 3Black J R.Electromigration failure modes in aluminum metallization for semiconductor devices[J].Proceedings of the IEEE,1969,57(9) :1587.
  • 4孙英华.金属化布线中焦耳热效应的测试和分析[A]..第九届学术年会论文选[C].西安:西安电子科技大学出版社,1998.178-181.
  • 5TownerJM 张晓明译.晶片级薄膜电迁移[M].西安:西安电子科技大学出版社,1992.307-311.

同被引文献18

  • 1欧阳斯可,汪涛,戴永兵,沈荷生,吴建生,何贤昶.微波等离子加热实现金属薄膜固相反应[J].新技术新工艺,2004(6):36-38. 被引量:1
  • 2许居衍.我国半导体工业发展前景分析[J].半导体技术,1995,11(5):1-8. 被引量:2
  • 3赵毅,曹刚,徐向明.多晶硅加热法评价金属互连线电迁移寿命[J].Journal of Semiconductors,2005,26(8):1653-1655. 被引量:4
  • 4朱炜容,黄云,黄美浅,钮利荣.GaAs MESFET的热电子应力退化[J].电子产品可靠性与环境试验,2005,23(6):32-35. 被引量:5
  • 5李健,汪金华,陆陪永.温度步进应力加速寿命试验研究[J].电子产品可靠性与环境试验,2007,25(1):1-4. 被引量:10
  • 6Chou Y C, Lai R, Leung D. Gate Sinking Effect of 0.1 μm InP HEMT MMICS Using Pt/Ti/Pt/Au [ C ]//2006 IEEE : 188 - 191.
  • 7Chou Y C, Grundbacher R. Physical Identification of Gate Metal Interdiffusionin GaAs PHEMTs [ J]. IEEE Electron Device Letters, 2004, 25 (2) : 64 - 66.
  • 8Kuo Chien-I, Hsu Heng-Tung, et al. RF and Logic Performance Improvement of In0.7 Gao.3 As/InAs/In0.7 Ga0.3 As Composite- Channel HEMT Using Gate-Sinking Technology [ J]. IEEE Electron Device Letters, 2008, 29 (4) : 290- 293.
  • 9Magistrali F, Sala D, Turner J, Vanner K. Vanner High Current Temperature Stress Test on Metal Lines and Interconnections for GaAs MMICs [ C ]//GaAs IC Symposium. IEEE 2003 : 261 - 264.
  • 10Chou Y C, Luo B W, Leung D, et al. The Effect of Gate Current on the Degradation of GaAs PHEMT MMICs [ C ]//2006 JEDEC: 111 -114.

引证文献3

二级引证文献9

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部