摘要
叙述了用液相外延(LPE)制作 InGaAsP/InP 雪崩光电二极管(APD)的物理性能。分析了该器件的设计参数。介绍了器件结构、器件制作中 LPE 生长条件及器件性能。最后,评述了器件发展水平及改进意见。
This paper reviews physical properties of InGaAs/InP ava- larche photodicdes(APDs)grown by LPE.The optimization design,structure, and fabrication technology are analysed.Finally,the development of the de- vice is presented and approaches toward improvement of these devices are proposed.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第1期41-47,共7页
Semiconductor Optoelectronics
