重掺硼多晶硅薄膜的电学性质

Electrical Properties of Heavy Boron Doped Polycrystalline Silicon Film

论述了重掺硼多晶硅薄膜的载流子陷阱导电模型。基于此理论,对电阻率ρ、载流子迁移率μp、电导激活能 E_a 与掺杂浓度、晶粒尺寸的关系进行了分析实验,给出了理论曲线和实验数据。最后,讨论了此理论的局限性。

The carrier conductive trapping model of heavy boron doped polysilicon film is demonstrated,On the basis of this model,the resistivity, the carrier mobility and the activation energy relating to the doping concen- trations and the grain size are analysed.The theoretical calculation curve and the experimental data are given.Finally the limitations of the model are also discussed.