硅基场致发射光电探测器及硅锥阴极工艺研究

Study on Si Field Emission Photodetector and Si-cones Cathode Technology

半导体硅锥的场致发射所具有的饱和特性可以用于制造一种新型的光电探测器,本文介绍了这种光电探测器的基本原理和构造,并对其光电阴极的核心部件——硅锥阴极的工艺进行了实验研究。

Saturation eharacterastics of semiconductor Si-cones field emission can be used to fabricate a novel photodetector.This paper introduces the basic prin- ciple and structure for this detector.Experimental research on Si-cones cathode technology is carried out.