摘要
采用三相结构制作了491(V)×384(H)元内线转移 CCD 摄像器件。该器件采用埋沟和四层多晶硅技术,水平分辨率为250TV 线,动态范围达46dB。本文对该器件的工作原理、设计和制作工艺作了详细的介绍。
A 491(V)×384(H)element interline CCD imaging device has been successfully developed with three-phase construction.The device adopts a buried- channel and four layeres polysilicon technology.The hozizontal limit resolution of 250 TV lines with the dynamic range up to 46dB.In this paper,the principle of op- eration,design consideration and fabrication technology for the device are described in detail.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第2期134-137,共4页
Semiconductor Optoelectronics
