摘要
报道了使用 IL400膜厚速率控制仪监控 SiO 减反射膜的蒸镀,通过对1.3μm 激光器前端面蒸镀 SiO 减反射膜而制成了超辐射发光二极管。
We report the result of the evaporation of SiO antireflection film monitored by the model IL400 thickness and rate controller.A superlumineseent diode is fabricated by means of evaporation of SiO antireflection film on the front facet of 1.3μm LD.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第2期172-174,184,共4页
Semiconductor Optoelectronics
