摘要
用电子束蒸发技术制备了 GaAlAs/GaAs 和 InGaAsP/InP 发光管的减反射膜。从不同的 LED 和膜厚所获得的结果表明:0.85μm 或0.9μm GaAlAs/GaAsLED 端面上的单层(λ/4)Al_2O_3 AR 膜,能使之明显地增加输出光功率,其输出功率在50mA 和100mA 电流下通常可以增加25%～35%,最大达50%。但1.3μm 的InGaAsP/InP LED 上,单层的 ZrO_2 AR 膜比 Al_2O_3 AR 膜好。最后讨论了与输出功率和膜厚有关的问题。
The antireflection(AR)coating for GaAlAs/GaAs and InGaAsP/InP light emitting diodes(LED)have been prepared by electron beam evaporation tech- nique.The results obtained from various LED and film thickness show that a single layer Al_2O_3 AR film(a quarter wavelength thick)on 0.85μm or0.9μm GaAlAs/ GaAs LED facet can result in a significant increase of optical output power by a fac- tor of 25%～35%,with the peak value of 50%,at 50mA and 100mA.However, a single layer ZrO_2 AR film on 1.3μm InGaAsP/InP LED is better than Al_2O_3 AR film.Problems concerning output power and film thickness are discussed.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第2期175-179,共5页
Semiconductor Optoelectronics
关键词
发光二极管
光输出功率
高增透膜
Antireflection Coating
Light Emitting Diode
Optical Output Power
