模拟计算漂移速度线形对弱耦合超晶格纵向输运的影响

Simulation of the effect of the drift velocity line shape on the vertical transport in doped GaAs/AlAs superlattice with weak coupling

结合宏观和微观模型,分别模拟计算有效漂移速度V(f)线形对GaAs AlAs掺杂弱耦合窄垒和宽垒超晶格纵向输运的影响.U-I关系的第一平台的计算结果显示出与超晶格周期数相同的锯齿分支.计算结果还表明宽垒样品U-I关系的第一平台的宽度随流体静压(大于临界压力)的增加而明显变小,而窄垒样品U-I关系的第一平台的宽度则不随流体静压(大于临界压力)的增加而变化.计算结果与实验数据基本吻合.

Vertical transport in doped GaAs/AlAs superlattice with weak coupling is simulated by combining the macroscopic model and the microscopic one. The first plateau of U-I curve calculated shows branches with a total number same as the number of superlattice period. In case of wider barrier, the width of the first plateau of U-I curve decreases significantly with the increase of the hydrostatic pressure (above the critical pressure). However, in case of narrower barrier, the width of the first plateau of U-I curve keeps constant with the increase of the hydrostatic pressure (above the critical pressure). The calculated results agree with the experimental results.