摘要
本文研究了F^+离子注入诱导InGaAsP/InGaAs多量子阱结构,并着重研究了晶格匹配和失配应力对F^+离子注入诱导无序的影响,用变温光荧光(13～300K)方法研究了和带隙直接有关的光荧光峰值随温度变化的规律。在13K条件下,F^-离子注入具有压应力应变层的样品导致光荧光峰产生35meV的蓝移,而对具有张应力的样品,仅产生8meV的蓝移。定性地分析了产生不同程度蓝移的原因。
The effect of strain on F^+-implantation induced compositional disor- dering in InGaAs/InGaAsP strained layer multiple quantum wells (MQW)structure is investigated.The temperature dependence of photoluminescence peak energy was measured and compared for structures with tensile,compressive strained and un- strained MQWs.At 14K,the biggest blue-shift(35meV)was obtained from the com- pressive strained structure and the smallest one(8meV)from the tensile strained structure.The effect of the strain with different forms on implantat ion induced compositional disordering is qualitatively explained.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第3期263-268,共6页
Semiconductor Optoelectronics
关键词
离子注入
量子阱结构
化合物半导体
Implantation Induced Disordering
Compressive and lensne Strained Layer
MQW Structure
