摘要
半导体激光器的输出光谱,反映了激光器本身的基本工作特性。本文从实验上研究了半导体激光器的输出光谱特性随偏置电流而变化的关系,并对其进行了理论分析。在此基础上,进一步测得了半导体激光器的热阻,增益峰值波长和纵模波长对载流子密度的相对变化率等基本参量。
The essential characteristics of a semiconductor laser diode can be re- vealed from its output spectra.In this work,the dependence of the output spectra characteristics of a semiconductor laser diode on bias current is analysed experimen- tally and theoretically.As a result,the variation of peak gain wavelength and longi- tudinal mode wavelength with carrier density is determined as well as the thermal resistance of the laser diode.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第3期278-280,295,共4页
Semiconductor Optoelectronics
基金
国家教委留学回国人员基金
关键词
半导体激光器
输出光谱
参数测量
Semiconductor Laser Diode
Output Spectra
Bais Current
Wavelength Shift