摘要
介绍了两种制备多孔硅的方法:电火花刻蚀法和激光辐射腐蚀法。讨论了这两种新方法制备的多孔硅样品的结构和发光特性,同时,与电化学法制备的多孔硅的结构和发光特性进行了比较。最后指出这两种新方法对于多孔硅形成机理和发光机制研究是有所帮助的。
Two new methods for porous silicon preparation i. e. spark erosion and laser irradiation erosion are reviewed in this paper. The structure and photolu- minescence of porous silicon prepared by these two new methods are discussed. It is proposed that the new methods are help, ful to the research on mechanism of porous silicon formation and photoluminescence.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第4期337-339,共3页
Semiconductor Optoelectronics
