摘要
(重庆光电技术研究所,永川 632163) 概述了GaAs材料的离子注入及有关的问题,如损伤退火,掺杂剂激活和载流子分布等。另外,还提出了几种改善掺杂效率的方法。
In this paper, topics concerning ion implantation of SI GaAs materi- als, such as damage annealing, dopants activation and carrier profiles, are reviewed. In addition, several methods for improving electrical ectivation efficiency of dopants are proposed as well.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第4期327-331,350,共6页
Semiconductor Optoelectronics
