摘要
介绍了在高压单晶炉内每次直接合成1000g InP的新工艺。对合成的InP进行测试表明,非掺杂InP的载流子浓度一般为3～6×10^(15)cm^(-3),迁移率4200cm^2/V.s以上,最高可达4700～4900cm^2/V.s,其纯度优于用水平法(HB)合成的InP。
This paper describes the synthesis technology of 1000g InP every run in the high Pressure puller. The test results to InP indicates that the carrier concentration is 3～6×10^(15)cm^(-3), the mobility is more than 4200cm^2/V. s, and the maximum is 4700～4900cm^2V. s. It is much better than InP synthesized by HB method.
出处
《半导体情报》
1993年第4期1-4,共4页
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