摘要
给出的这一解析模型,是在合理近似基础上,通过求解二维Poisson方程获得的。其计算值与数值模拟结果相符,而且该模型也是分析平面栅静电感应晶体管特性的基础。
Based on reasonable approximation and by solution of two-dimensional Poisson's equation, an analytical model is developed for the blocking state of surface gate static induction transistor (SGSIT). The calculations agree with the resuits of numerical simulations. And the model is essential to characterize SGSIT.
出处
《半导体情报》
1993年第4期5-9,共5页
Semiconductor Information
关键词
静电
感应晶体管
势垒
电场分布
Electrostatic induction transistor, Potential barrier, Electric field distribution
