摘要
概述了实现超辐射发光二极管的主要手段以及制备的器件性能和特点,并讨论了其发展趋势。
The main means of realizing superluminescent diode and the functions, features of prepard devices are reviewed. The future development trends are alsodiscussed.
出处
《半导体情报》
1993年第6期38-42,12,共6页
Semiconductor Information
