摘要
本文采用以TMG、固体In和固体As作为分子束源的MOMBE法,首次成功地生长了空穴浓度高达1×10^(20)/cm^3数量级的重碳掺杂p型GaAs/In_xGa_(1-x)As(x=0.3)应变超晶格(SLS)结构,用XRD、Raman、PL和Hall测量等方法分析了样品特性,讨论了结构参数对应变弛豫及SLS特性的影响,结果表明,所得样品不仅具有很高的空穴浓度,而且具有较窄的等效禁带宽度,可望用于GaAs系HBT基区的制作。
Heavily carbon doped p-type GaAs/In_xGa_(1-x)As (x=0.3) strained-layer superlattices(SLS's) with effective hole concentration as high as 1×10^(20)/cm^3 have been grown successfullyfor the first time by MOMBE using TMG, solid indium and solid arsenic.The samples werecharacterized by XRD, Raman, PL and Hall measurements, The influences of the structuralparameters on the relaxation of misfit strain and the properties of the SLS's were discussed. Itis shown that the SLS's grown by MOMBE are of ver'y high hole concentration and lower effectivebandgap, which can be used as a base material for the GaAs based HBT's.
