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p—Hg_(0.97)Mn_(0.03)Te的磁阻振荡及霍耳系数振荡

Magnetoresistance Oscillation and Hall Coefficient Oscillation of p-Hg_(0.97)Mn_(0.03)Te
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摘要 p型零禁带Hg_(0.97)Mn_(0.03)Te在深低温(T<4.2K)弱磁场(B<0.6T)区出现磁阻振荡及霍耳系数振荡。用补充了交换互作用项的P-B模型拟合计算了各峰值位置,表明此组份Hg_(1-x)-Mn_xTe的重空穴价带b_v(-1)已交叠到导带a_c(1)之上。霍耳系数出现清晰的振荡行为,拟合计算表明这是由于费米能级为受主能级所钉扎引起的载流子浓度的振荡。 Magnetoresistance oscillation and Hall coefficient oscillation of p-type zero-gap Hg_(0.97)Mn_(0.03)Te have been measured at low temperature (T<4.2K) and weak magnetic field(B<0. 6T). The SdH peak position was fitted by the Modified Pidgeon-Brown model and wefound that for this composition, the valance band/b_v (-1) overlapped the conduction band a_c(1). Theoretical calculation shows that the Hall coefficient oscillation is caused by the electronconcentration oscillation resulted from the acceptor pinned Fermi level.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1993年第8期474-483,共10页 半导体学报(英文版)
关键词 化合物半导体 HgMnTe 磁阻振荡 Crystals Hall effect Mercury (metal) Oscillations
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