在超高真空系统中对硅表面进行电子束退火的L_(23)VV Auger能谱精细结构分析

Fine AES Analysis on Si Surface Related to L_(23)VV Transitions Following Electron Beam Annealing in UHV System

本文首先报道了在清洁的Si(100)表面观察到L_(23)VV的7条Auger精细谱线。经过短时间的电子束退火后又观察到能量为62.8eV和68.1eV两条谱线。前者可以用Si-O系统。L_(23)(Si)L_1(O)O_1(O)的交叉跃迁来解释;后者虽已有报道,但在解释上引起争议。本文根据实验认为它与C在Si表面的吸附有关。

Seven fine Auger peaks related to L_(23)VV transitions are observed on clean Si(100) surface.Following a short period of electron beam annealing, two new AES peaks with energy of62.8 eV and 68. 1 eV are found. The former is explained with L_(23)(Si)L_1(O)O_1(O) of Si-Osystem;the latter could be related with the absorption of C on Si Surface, which is differentfrom the current explanations.