新型电子转移复合物Cu-TCNQ(C_2H_4COOCH_3)_2的制备及其薄膜的绿光可擦重写光存储性能的研究

Study on spectrum properties and green-light rewritable optical storage properties of a novel ester derivative of CuTCNQ

报道了高溶解性能的电子转移复合物铜 (2,5 二丙酸甲酯 7,7,8,8 四氰基对苯醌二甲烷);并对其紫外可见光光谱进行了研究。用旋涂工艺制备了Cu TCNQ(C2H4COOCH3)2薄膜,并对该薄膜的可擦重写光存储性能及其机理进行了研究。短波长(514.5nm)静态可擦重写光存储性能测试结果表明:在写入功率为9mW,写入脉冲为80ns,擦除功率为4mW,擦除脉冲为500ns时反射率对比度>15%(无反射膜),循环次数可达110次以上,并且没有出现任何疲劳现象。

A novel charge-transfer complex: Cu-TCNQ(C_2H_4COOCH_3)_2 film was prepared by spin-coating. UV absorption spectra, green-light (514.5nm) static rewritable optical recording properties and rewritable mechanism of this film were studied. The high contrast patterns of this organometallic charge-transfer complex film can give directly produced on the film by irradiated photo beams generated from an argon ion laser. The patterns were erasable by the same light source under different irradiating conditions. Typical experimental results were as follows: for λ was 514.5nm, write-in power was 9mW, pulse duration was 80ns, erasing power was 4mW, pulse duration was 500ns; coefficient of contrast C >15%; number of write-erase cycles N>110. The switching mechanism of Cu-TCNQ(C_2H_4COOCH_3)_2 was discussed.