反应气压对氢化非晶氮化硅薄膜的发光特性影响

Influence of Gas Pressure on Luminescent Properties of a-SiN_x:H Films

采用螺旋波等离子体增强化学气相沉积(HWP-CVD)技术制备了氢化非晶氮化硅(a-SiNx:H)薄膜,利用光致发光谱(PL)和傅里叶红外吸收谱(FTIR)研究了不同气压条件下所形成薄膜的发光特性.结果表明,在较高气压条件下,所沉积薄膜的发光峰位在2.5eV附近;减小气压使薄膜的沉积速率下降,其内部原子微观结构发生变化,薄膜的发光峰位在3.05eV处,其半高宽为1.48eV.

Hydrogenated amorphous silicon nitride films (a-SiN_x:H) are deposited by helicon wave plasma enhanced chemical vapor deposition (HWP-CVD) at different gas pressures. The luminescence feature and bonding characteristics of the deposited films have been studied by photoluminescence (PL) spectroscopy and Fourier transform infrared spectroscopy (FTIR). The results show that the dominant PL peak of the films prepared at the gas pressure of 2.5 Pa is located at 2.5 eV; The deposition rate of the films decreased and the atomic microstructures of the films have been changed when the gas pressure is decreased to 0.5 Pa. The main PL peak with the full width at half maximum (FWHM) of 1.48 eV is presented at about 3.05 eV.