InN和GaN系衬底材料的研究和发展

Research and development of InN and GaN substrates

InN和GaN是宽禁带半导体中最重要的光电子材料,但现在还存在一些技术上的困难阻碍了它们的研究进展,其中一个重要的问题就是缺少合适的衬底材料。虽然现在对衬底材料的要求相对降低了,但为了生长出高质量的外延薄膜,选择合适的衬底材料还是非常必要。本文针对目前使用的InN外延衬底材料分别进行了讨论,评价了它们的优缺点,指出目前实用的InN衬底材料是有限的,应用最多的还是蓝宝石衬底和MgAl2O4晶体,且MgAl2O4晶体比蓝宝石晶体更有前景。

InN and GaN are the most important optoelectronic materials of wide band gap semiconductors now. But there were still some difficulties hinder research progress, and one of which was absence of acceptable substrates to InN film. Although epitaxy technology has developed, suitable substrates materials are still important to selecting fine InN film. The research developments on InN substrates were reviewed, the advantage and shortcoming of those substrates were evaluated. It is found that sapphire and MgAl_2O_4 crystal are the usual used substrates to InN film now, and MgAl_2O_4 crystal is better to sapphire.