钽铌电子材料新进展

New development of tantalum and niobium electronic materials

通过降低杂质含量、改善物理性能等新技术以及Ta2O5钠还原制取高比电容钽粉、TaCl5低温钠还原制取纳米级钽粉的新工艺方法,生产了性能优良的高比容钽粉,并研究了其微观结构;同时开发了制造高比电容铌粉、一氧化铌粉的新技术,制得了高性能的电容器级铌粉和一氧化铌粉,为铌电容器作为一种新类型电容器产业参与竞争提供了优质的基础材料。

By some new techniques of reducing impurity and improving physical properties, and by sodium reducing Ta_2O_5, tantalum powders with high capacitance and other excellent properties were produced, the morphologies were also studied. And by some new techniques of producing niobium or niobium monoxide powders, niobium/niobium monoxide powders with high capacitance were also obtained, which has supplied excellent fundamental material for niobium capacitors.