摘要
本文采用Cz法生长NaY (WO4 ) 2 晶体。研究了钨酸钇钠晶体的生长工艺 ,给出晶体生长的最佳工艺参数为拉速 1 - 2mm/h ,转速为 1 0 - 1 8r/min ,冷却速率为 1 8℃ /h ,轴向温度梯度为液面上 0 7— 1℃ /mm。大量实验表明 ,晶体开裂主要是由热应力引起的。热应力引起的开裂除了沿解理面方向外 ,还由于各方向上热膨胀系数不同 ,而表现为横向层状的断裂 (偏c轴方向生长 )和纵向断裂 (偏a轴方向生长 )两种形式。因此可通过设计合理而稳定的温场、选择最佳工艺参数及退火处理等方法 。
The NaY(WO 4) 2 crystal was grown by Cz method. The condition of the Cz-pulling procedure was described in details, which were: the pulling speed 1～2mm/h, the rotation rate 10～18r/min ,the cooling speed 18℃/h and the axial temperature gradient of in solid-liquid interface 0 7～1℃/mm. Experimental results show that crystal cracking of thermal stress included not only along cleavage place crack but also lateral stratum crack(growth of C direction) and longitudinal length crack(a-axial direction growth) which was caused by dissimilar coefficient of expansion in all directions. During designing stable temperature field and selecting rational technology parameters and annealing process, perfect crystal was grown.
出处
《长春理工大学学报（自然科学版）》
2004年第2期89-91,共3页
Journal of Changchun University of Science and Technology(Natural Science Edition)
基金
吉林省科技厅科技发展计划资助项目 (吉科 2 0 0 10 65 9-4 )
